By Richard C. Alkire, Heinz Gerischer, Dieter M. Kolb, Charles W. Tobias
This sequence, previously edited through Heinz Gerischer and Charls V. Tobias, now edited by way of Richard C. Alkire and Dieter M. Kolb, has been warmly welcomed by means of scientists world-wide that is mirrored within the stories of the former volumes: 'This is a necessary booklet for researchers in electrochemistry; it covers parts of either primary and functional significance, with reports of top of the range. the cloth is particularly good provided and the alternative of subject matters displays a balanced editorial coverage that's welcomed.' The Analyst 'All the contributions during this quantity are good as much as the normal of this glorious sequence and may be of serious price to electrochemists... The editors back should be congratulated in this superb choice of reviews.' magazine of Electroanalytical Chemistry and Interfacial Chemistry `...competently and obviously written.' Berichte der Bunsen- Gesellschaft für Physikalische Chemie
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There are c. lo', pyramids/cm2 presenting (1 11) microfacets and a height of 20 A;(100) terraces represent about 60% of the surface exposed to solution. This surface structure is little affected at longer exposure, implying that the (100) face is rather unexpectedly stable compared with the (111) face. The reason is apparently a 2 x 1 reconstruction of the (100) face, as suggested by the strings resolved in the area with enhanced contrast of Fig. 19d. Though Si-H monohydrides are threefold-coordinated on the reconstructed (100) face and on the (1 11) face, the etch rate of the (100) surface is slightly faster because the Si - H are strained on the (100) face.
In NaOH the resolution of images was much better than in fluoride solutions. In-situ high-resolution images revealed first that the surface was terminated by a monolayer of Si-H bonds because it was again (1 x 1) unreconstructed (see Fig. 10) [18, 20, 1201. This surface chemistry, unexpected in an alkaline solution, has been confirmed recently by in-situ IR spectroscopy [ 11I]. On a larger scale the potential dependence of Si(l11) etching has been followed in real time with the resolution of atomic-scale defects.
Calculations predict that the gap becomes direct below a critical size (2-4 nm) of Si particles. Despite many investigations the mechanism of formation and the origin of the photoluminescence are still not clearly elucidated and remain open questions . In the context of PSL studies, local probe microscopes are difficult to operate ex situ for several reasons. The Si skeleton is fragile and easily destroyed, especially by AFM tips. The resistivity of layers (> lo9 Cl cm) is also a problem for tunneling.